ماسفت IRF840 پکیج TO-220

Technology:     Si    
Mounting Style:     Through Hole    
Package / Case:     TO-220-3    
Number of Channels:     1 Channel    
Transistor Polarity:     N-Channel    
Vds – Drain-Source Breakdown Voltage:     500 V    
Id – Continuous Drain Current:     8 A    
Rds On – Drain-Source Resistance:     850 mOhms    
Vgs – Gate-Source Voltage:     20 V    
Maximum Operating Temperature:     + 150 C    
Packaging:     Tube    
Channel Mode:     Enhancement    
Brand:     Vishay Semiconductors    
Configuration:     Single    
Fall Time:     20 ns    
Height:     9.01 mm    
Length:     10.41 mm    
Minimum Operating Temperature:     – 55 C    
Pd – Power Dissipation:     125 W    
Rise Time:     23 ns    
Factory Pack Quantity:     1000    
Transistor Type:     1 N-Channel    
Typical Turn-Off Delay Time:     49 ns    
Typical Turn-On Delay Time:     14 ns    
Width:     4.7 mm    
Unit Weight:     0.211644 oz