Specification
Manufacturer: Infineon
Product Category: MOSFET
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 150 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 6.2 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 93 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 300 W
Channel Mode: Enhancement
Tradename: OptiMOS
Brand: Infineon Technologies
Configuration: Single
Fall Time: 14 ns
Forward Transconductance – Min: 65 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 35 ns
Series: OptiMOS 3
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 46 ns
Typical Turn-On Delay Time: 25 ns
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