Product Category: MOSFET
RoHS: No
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 50 A
Rds On – Drain-Source Resistance: 18 mOhms
Vgs – Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 175 C
Configuration: Single
Fall Time: 250 ns
Height: 9.01 mm
Length: 10.41 mm
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 190 W
Rise Time: 250 ns
Series: IRFZ48
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 210 ns
Typical Turn-On Delay Time: 8.1 ns
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Ultra Low On-Resistance
• Very Low Thermal Resistance
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) VGS = 10 V 0.018
Qg (Max.) (nC) 110
Qgs (nC) 29
Qgd (nC) 36
Configuration Single
نقد و بررسیها0
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