ماسفت 020N06N تایوانی مارک Infineon پکیج TO-220

Specification

Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 120 A
Rds On – Drain-Source Resistance: 1.8 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.1 V
Qg – Gate Charge: 124 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 214 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 19 ns
Forward Transconductance – Min: 100 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 45 ns
Series: OptiMOS 5
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 51 ns
Typical Turn-On Delay Time: 24 ns
Width: 4.4 mm