ماسفت IRF630 پکیج TO-220

Specification 

• Product Category: MOSFET
• Technology: Si
• Package / Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds – Drain-Source Breakdown Voltage: 200 V
• Id – Continuous Drain Current: 9 A
• Rds On – Drain-Source Resistance: 400 mOhms
• Vgs – Gate-Source Voltage: – 20 V, + 20 V
• Vgs th – Gate-Source Threshold Voltage: 2 V
• Qg – Gate Charge: 31 nC
• Minimum Operating Temperature: – 65 C
• Maximum Operating Temperature: + 150 C
• Pd – Power Dissipation: 75 W
• Channel Mode: Enhancement
• Packaging: Tube
• Configuration: Single
• Forward Transconductance – Min: 3 S
• Height: 9.15 mm
• Length: 10.4 mm
• Product Type: MOSFET
• Rise Time: 15 ns
• Series: IRF630
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Type: MOSFET
• Typical Turn-On Delay Time: 10 ns
• Width: 4.6 mm